GaN HEMT DevicesLakeSemi GaN FETs
650V / 100V / 1200V GaN HEMTs based on the QST™ process platform, available in both enhancement-mode and cascode topologies. Low output capacitance and low gate charge push the switching frequency ceiling above 1 MHz — perfect for PFC, LLC and hard-switched flyback converters.
ExploreGate DriversGate Drivers & Isolated Drivers
GaN-/IGBT-/SiC-specific half-bridge and low-side driver ICs with 5V/12V/15V input and built-in Miller clamp. Paired with digital isolators, they deliver 1 ns-level timing accuracy and robust negative-transient protection in industrial servos, PV-storage converters and UPS systems.
ExploreSilicon MOSFETsSilicon MOSFETs
LakeSemi silicon MOSFETs precisely control source-drain current via the gate voltage and offer industry-leading RDS(on) × Qg FOM in the 30V–250V range. Widely used in power amplifiers, voltage regulators, battery protection and switching circuits — cooler, faster and more durable systems.
ExploreIGBTsIGBTs
Insulated-gate bipolar transistors deliver high current density and short-circuit ruggedness in motor drives, induction heating and high-voltage power conversion. LakeSemi IGBTs combine low Vce(sat) with strong short-circuit protection for industrial inverters and welding power supplies.
ExplorePower Modules / IPMPower Modules & IPMs
Intelligent Power Modules (IPMs) integrate IGBT/MOSFET, gate driver, and under-voltage / over-current / over-temperature protection with built-in fault diagnostics. Coverage spans inverter home appliances, industrial servos, UPS and energy conversion systems. SiC hybrid modules excel in EV OBC and PV inverters.
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