LakeSemi gate drivers LSC2101A / LSC2104A are 600 V high-voltage, high-speed half-bridge gate driver ICs for GaN / IGBT / SiC power switches: the floating channel withstands up to +600 V bias with ±50 V/ns transient tolerance; gate drive voltage 10~20 V with 3.3/5/15 V logic-compatible inputs; built-in undervoltage lockout (UVLO) and matched propagation delays between the two channels, with a proprietary high-voltage gate process and latch-up-immune CMOS for long-term reliability. LSC2101A provides independent high-side and low-side outputs (in-phase 2101 / out-of-phase 2102 versions); LSC2104A integrates shoot-through protection logic, built-in dead-time and dual-channel shutdown (SD) for motor-drive and LLC resonant applications. Industrial servo drives, PV storage inverters, UPS, induction heating and high-voltage DC/DC converters — click below to download the official datasheet (PDF) for each part.
| Part | Topology | High-Side | Drive Voltage | Prop. Delay | Features | Package |
|---|---|---|---|---|---|---|
| LSC2101A | Independent High/Low-Side | 600 V | 10~20 V | Channel-matched | In-phase (2102 out-of-phase) | DIP-8 / SOP-8 |
| LSC2104A | Half-Bridge (dead-time + SD) | 600 V | 10~20 V | ton 680 ns / toff 150 ns | Shoot-through / dual SD | DIP-8 / SOIC-8 |
600 V High-Side / Low-Side Gate Driver · 10~20 V Drive · 3.3/5/15 V Logic
| Topology / Outputs | Independent high-side + low-side half-bridge gate driver |
|---|---|
| High-side floating supply | Up to +600 V · VS = VB-25 ~ VB+0.3 V |
| Gate drive voltage | 10~20 V (VDD range) |
| Input logic levels | 3.3 V / 5 V / 15 V CMOS / LSTTL compatible |
| Output phase | 2101 in-phase / 2102 out-of-phase (two versions) |
| Channel-matched delay | Built-in matching — simplifies half-bridge timing |
| Transient tolerance | dV/dt = 50 V/ns negative-transient immunity |
| Protection | Built-in VCC / VBS UVLO · latch-up-immune CMOS |
| Package / Power | DIP-8 (1.0 W) / SOP-8 (0.625 W) · Tj -55 ~ 150 °C |
Typical Applications: Industrial inverter & servo drive · PV storage inverter · UPS · Induction heating · High-voltage DC/DC · GaN / IGBT / SiC half-bridge
Download Datasheet (V1.03, CN, PDF) ↓600 V Half-Bridge Gate Driver with Shutdown · 10~20 V Drive · Built-in Dead-Time
| Topology / Outputs | Half-bridge gate driver (HO / LO interlocked) |
|---|---|
| High-side floating supply | Up to +600 V · VS = VB-25 ~ VB+0.3 V |
| Gate drive voltage | 10~20 V (VDD range) |
| Input logic levels | 3.3 V / 5 V / 15 V CMOS / LSTTL compatible |
| Propagation delay (typ.) | ton 680 ns / toff 150 ns · SD 160 ns |
| Shoot-through / dead-time | Built-in shoot-through protection + dead-time — prevents simultaneous turn-on |
| Shutdown (SD) | Both channels support SD emergency shutdown |
| Transient tolerance | dV/dt = 50 V/ns negative-transient immunity |
| Protection | Built-in VCC / VBS UVLO · latch-up-immune CMOS |
| Package / Power | DIP-8 (1.0 W) / SOIC-8 (0.625 W) · Tj -55 ~ 150 °C |
Typical Applications: Motor drive (FOC / BLDC) · LLC resonant converter · Half / full-bridge inverter · Industrial PSU · GaN / IGBT / SiC half-bridge
Download Datasheet (V1.02, CN, PDF) ↓