200W QR flyback single-chip GaN power IC. Integrates 650V GaN HEMT + controller + driver, hits 94%+ efficiency, drops the heatsink and the opto-coupler for a smaller BOM and cleaner EMI.
CrM/DCM PFC controller paired with the 2EDB7259Y half-bridge driver and our 65R150 GaN HEMT — pushing the PFC stage past 99% efficiency to meet 80 Plus Titanium on the full AC/DC unit.
650V / 65mΩ GaN HEMT built on the QST platform. Ceramic substrate thermal conductivity 170–230 W/mK and 100V/ns dV/dt — purpose-built for 1MHz+ hard switching and high-bandwidth servo drives.
Please fill in the form below. We will send the document to you by email.
We have received your request. Our team will send the
document to your email within 1 business day.
