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GaN HEMT Devices

650V GaN HEMT · QST™ Enhancement-Mode Power Transistors

Every LakeSemi GaN HEMT is built on the proprietary QST™ (Qromis Substrate Technology) platform, rated 650V with on-resistance spanning 38 mΩ to 300 mΩ. Three industry-standard packages are offered — PDFN 5×6 (B), PDFN 8×8 (C), and TOLL 10×12 (E) — pushing switching frequency above 1 MHz and making them ideal for bridgeless totem-pole PFC, LLC resonant, QR flyback, and on-board chargers. Download official V1.0 / V1.1 datasheet PDFs for every part below.

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Part Number VDS RDS(on) max Continuous IDS Pulse IDS Package Positioning
LGaDC65R038N 650 V38 mΩ42 A81 APDFN 8×8Flagship low-R / high-power PFC
LGaDC65R045N 650 V45 mΩ42 A81 APDFN 8×8High-frequency / industrial PSU
LGaDE65R045N 650 V45 mΩ—70 ATOLL 10×12High-power / EV traction
LGaDC65R150N 650 V150 mΩ18 A36 APDFN 8×8Best-seller / ≤240 W flyback
LGaDB65R150N 650 V150 mΩ18 A36 APDFN 5×6Compact / consumer fast charge
LGaDB65R300N 650 V300 mΩ——PDFN 5×6Low-power / ≤100 W

650V GaN HEMT Family

650V GaN HEMT Product Lineup ‹ Back to product categories
PDFN 8×8 Flagship

LGaDC65R038N

650V GaN-on-QST™ Power Transistor · 38 mΩ · PDFN 8×8

Drain-Source VDS650 V (transient 850 V)
RDS(on) @VGS=6V38 mΩ (typ.)
Continuous IDS @TC=25°C42 A
Pulse IDS81 A (10 µs)
Gate Drive VGS−10 V ~ +7 V
ESD (HBM)10 kV
PackagePDFN 8.0 × 8.0 mm · 8-pin · exposed pad

Typical Apps: Bridgeless totem-pole PFC · LLC · high-power server PSU · on-board charger

Download Datasheet (V1.1, EN, PDF) ↓
PDFN 8×8 High-Frequency Choice

LGaDC65R045N

650V GaN-on-QST™ Power Transistor · 45 mΩ · PDFN 8×8

Drain-Source Voltage VDS650 V (transient 850 V)
On-Resistance RDS(on) @VGS=6V45 mΩ (typ.)
Continuous Drain Current IDS @TC=25°C42 A
Pulse Current IDS(pulse)81 A (10 µs)
Gate Drive VGS−10 V ~ +7 V
ESD (HBM)10 kV
PackagePDFN 8.0 × 8.0 mm · 8-pin · exposed pad

Typical Apps: Bridgeless totem-pole PFC · LLC · industrial PSU · PV inverter · UPS

Download Datasheet (V1.1, EN, PDF) ↓
TOLL 10×12 High-Power

LGaDE65R045N

650V GaN-on-QST™ Power Transistor · 45 mΩ · TOLL 10×12

Drain-Source Voltage VDS650 V (transient 850 V)
On-Resistance RDS(on) @VGS=6V45 mΩ (typ.)
Continuous Drain Current IDS @TC=25°C—
Pulse Current IDS(pulse)70 A
Gate Drive VGS−10 V ~ +7 V
ESD (HBM)10 kV
PackageTOLL 10.0 × 12.0 mm · 9-pin · TO-Leadless

Typical Apps: EV traction inverter · on-board charger · high-power totem-pole PFC · PV / energy storage

Download Datasheet (V1.0, EN, PDF) ↓
PDFN 8×8 Bestseller

LGaDC65R150N

650V GaN-on-QST™ Power Transistor · 150 mΩ · PDFN 8×8

Drain-Source Voltage VDS650 V (transient 850 V)
On-Resistance RDS(on) @VGS=6V150 mΩ (max.)
Continuous Drain Current IDS @TC=25°C18 A
Pulse Current IDS(pulse)36 A (10 µs)
Gate Drive VGS−10 V ~ +7 V
ESD (HBM)10 kV
PackagePDFN 8.0 × 8.0 mm · 8-pin · exposed pad

Typical Apps: 100–240 W flyback · AC-DC adapters · LED drivers · USB-PD fast chargers

Download Datasheet (V1.0, EN, PDF) ↓
PDFN 5×6 Compact

LGaDB65R150N

650V GaN-on-QST™ Power Transistor · 150 mΩ · PDFN 5×6

Drain-Source Voltage VDS650 V (transient 850 V)
On-Resistance RDS(on) @VGS=6V150 mΩ (max.)
Continuous Drain Current IDS @TC=25°C18 A
Pulse Current IDS(pulse)36 A (10 µs)
Gate Drive VGS−10 V ~ +7 V
ESD (HBM)10 kV
PackagePDFN 5.0 × 6.0 mm · 5-pin · exposed pad

Typical Apps: 65–100 W flyback · USB-PD adapters · compact SMPS · laptop adapters

Download Datasheet (V1.0, EN, PDF) ↓
PDFN 5×6 Low-Power

LGaDB65R300N

650V GaN-on-QST™ Power Transistor · 300 mΩ · PDFN 5×6

Drain-Source Voltage VDS650 V (VBLDSS)
On-Resistance RDS(on) @VGS=6V300 mΩ (max.)
Continuous Drain Current IDS @TC=25°C—
Pulse Current IDS(pulse)—
Gate Drive VGS−10 V ~ +7 V
ESD (HBM)—
PackagePDFN 5.0 × 6.0 mm · 5-pin · exposed pad

Typical Apps: ≤100 W flyback · auxiliary supplies · appliance low-power SMPS

Download Datasheet (V1.0, EN, PDF) ↓