LakeSemi silicon power MOSFETs span two process platforms — 650V Super-Junction Gen-Ⅱ and 200V / 150V SGT (shielded-gate). The 650V SJ family leverages a Multi-Epi charge-balance process to deliver 0.54 Ω typical on-resistance with an ultra-low 11.8 nC gate charge, in a choice of TO-220 / TO-263 / TO-220 FullPAK packages. The 200V / 150V SGT family offers 10–16 mΩ on-resistance, 60–71 A continuous drain current and 215–498 mJ avalanche energy for power factor correction, server and telecom power supplies, inverters and motor control. All parts are 100% avalanche tested and qualified to JESD-22 (HTRB >1000 hrs) — click below to download the official datasheet (PDF) for each part.
| Part | VDSS | RDS(on) max | ID Cont. (25°C) | IDM Pulsed | Qg | Package | Positioning |
|---|---|---|---|---|---|---|---|
| LSSF65R600S2 | 650 V | 0.6 Ω | 8 A | 32 A | 11.8 nC | TO-220 / TO-263 / TO-220F | SJ · high-voltage switch |
| LSF10R150S | 150 V | 12 mΩ | 71 A | 284 A | 21 nC | PDFN 5×6 | Low-voltage · high-current |
| LSD200N0016T | 200 V | 18 mΩ | 60 A | 200 A | 19 nC | DFN 5×6 | 200V · high-avalanche |
650V Super-Junction MOSFET Gen-Ⅱ · 0.54 Ω · 11.8 nC
| Breakdown Voltage VDSS | 650 V (700 V @ Tj=150°C) |
|---|---|
| RDS(on) @VGS=10V | 0.54 Ω typ / 0.6 Ω max |
| Continuous ID | 8 A @TC=25°C · 5 A @TC=100°C |
| Pulsed IDM | 32 A |
| Total Gate Charge Qg | 11.8 nC (ultra-low switching loss) |
| Avalanche Energy EAS | 240 mJ · 100% avalanche tested |
| Dynamic Robustness | Diode-recovery dv/dt 15 V/ns · VDS slope 50 V/ns |
| Package | TO-220 / TO-263 (D²PAK) / TO-220 FullPAK options |
Typical Apps: AC/DC SMPS · power factor correction (PFC) · high-voltage switching · LED lighting
Download Datasheet (Rev1.0, EN, PDF) ↓150V SGT Silicon MOSFET · 10 mΩ · 71 A
| Breakdown Voltage VDSS | 150 V |
|---|---|
| RDS(on) @VGS=10V | 10 mΩ typ / 12 mΩ max |
| Continuous ID | 71 A @TC=25°C · 50 A @TC=100°C |
| Pulsed IDM | 284 A |
| Total Gate Charge Qg | 21 nC · transconductance gfs 40 S |
| Avalanche Energy EAS | 215 mJ (single pulse) |
| Power / Thermal | PD 104 W · RθJC 1.1 °C/W |
| Package | PDFN 5×6 mm · surface-mount · low thermal resistance |
Typical Apps: power factor correction (PFC) · server power supplies · telecom rectifiers · inverters · motor control
Download Datasheet (V1.0, EN, PDF) ↓200V SGT Silicon MOSFET · 16 mΩ · 60 A
| Breakdown Voltage VDSS | 200 V (typ 220 V) |
|---|---|
| RDS(on) @VGS=10V | 16 mΩ typ / 18 mΩ max |
| Continuous ID | 60 A @TC=25°C · 40 A @TC=100°C |
| Pulsed IDM | 200 A |
| Total Gate Charge Qg | 19 nC (max) |
| Avalanche Energy EAS | 498 mJ · high avalanche ruggedness |
| Power / Thermal | PD 150 W · RθJC 1.0 °C/W |
| Package | DFN 5×6 mm · surface-mount · low thermal resistance |
Typical Apps: power factor correction (PFC) · server power supplies · telecom rectifiers · inverters · motor control
Download Datasheet (V1.1, EN, PDF) ↓